Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si

Variations in the lattice constant of Ge film were determined by reflection high-energy electron diffraction in the course of the molecular beam epitaxy (MBE) film growth on the silicon surface. Oscillations of the in-plane atomic cell constant were observed for the Ge film growing according to the two-dimensional (2D) mechanism. Variations in the 2D lattice constant at the stage of 2D growth are caused by elastic deformation of edges of 2D islands.