Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures

Electrical resistivity and Hall measurements have been performed, on strained B-heavily doped Si0.8Ge0.2 epilayers grown by molecular beam epitaxy (MBE) technique, in the temperature range 80–350 K. In-plane Hall mobility and concentration of the free holes were extracted and discussed taking into account the high doping level effects, scattering mechanisms as well as previous drift mobility results.