Dopant diffusion in SiGe: modeling stress and Ge chemical effects

From critical synthesis of the published theoretical and experimental studies on biaxial stress and hydrostatic pressure influence on point defects concentrations, and physical considerations on the Ge chemical effect, the diffusion of dopants in Silicon–Germanium alloys (SiGe) is modeled on the basis of the evolution of single point defect concentrations induced by the presence of Germanium atoms and the stress field of the SiGe material. The model is valid for SiGe strained and relaxed alloys with Ge content lower than 40% and is consistent with experimental data in the case of Phosphorus and Antimony.