Author/Authors :
Avrutin، نويسنده , , V.S and Izyumskaya، نويسنده , , N.F and Vyatkin، نويسنده , , A.F and Zinenko، نويسنده , , V.I and Agafonov، نويسنده , , Yu.A and Irzhak، نويسنده , , D.V and Roshchupkin، نويسنده , , D.V and Steinman، نويسنده , , E.A and Vdovin، نويسنده , , V.I and Yugova، نويسنده , , T.G، نويسنده ,
Abstract :
The effect of non-equilibrium point defects on strain relaxation in pseudomorphic Si0.76Ge0.24/Si heterostructures was studied by X-ray diffraction (XRD) and low-temperature photoluminescence (PL). The overcritical Si0.76Ge0.24 layer was grown by molecular beam epitaxy at relatively low temperature in order to avoid strain relaxation during the growth and then the non-equilibrium point defect were introduced by Ge+ ion implantation. The samples were annealed in the temperature range from 500 to 600 °C. The ion-irradiated heterostructures showed considerably different relaxation behavior than the unimplanted samples. For the same heat-treatment conditions, the degree of relaxation was found to increase as the implantation dose rose.
Keywords :
Implantation , SiGe , Radiation defects , Strain relaxation
