Parameters on the texture development of CeO2 films directly deposited on a Ni metal substrate by chemical vapor deposition

Texture development of CeO2 thin films deposited in-situ on textured Ni substrate by metal-organic chemical vapor deposition was investigated. Crystalline CeO2 films were formed above 450 °C. The texture of the deposited CeO2 films varied with the deposition temperature, oxygen partial pressure, tilt angle of the substrate, and substrate distance from the nozzle. The CeO2 film prepared using optimized condition showed a strong (100)〈011〉 texture even though the texture widely diffused around the normal direction of the substrate plane. The typical growth rate of the CeO2 film was measured as being 40 nm min−1.