Title of article
Chemical lowering of the interface Fermi level of n and p types GaAs/Al Schottky diodes
Author/Authors
Mazari، نويسنده , , H. and Benamara، نويسنده , , Z. and Bonnaud، نويسنده , , O. and Olier، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
171
To page
175
Abstract
Modification of the surface of GaAs by Ru3+ adsorption leads to a change in Schottky barrier heights of Al/GaAs junctions for both n- and p-type. From our measurements, we have inferred that the surface Fermi level, when compared to the commonly measured pinning position in Al/GaAs structures, is shifted by about 0.1 eV towards the valence band edge.
Keywords
Schottky barrier heights , Fermi level , Al/GaAs structures
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138043
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