Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond

A lateral micro-ion beam induced charge technique has been used to obtain the charge collection efficiency (CCE) profiles at different biases applied on the growth electrode of chemical vapor deposition (CVD) diamond. A new linear model, only related to characteristic parameters (mobility×lifetime product) of CVD diamond, was reasonably proposed and checked by fitting the CCE profile. The results confirm that: (1) this CVD diamond is similar to a n–p junction film with bulk volume p type on the substrate side at the positive bias applied on the growth side; (2) in the case of negative bias, space charge on both sides may arise from donors/acceptors of the film and electrons/holes injected from the growth/substrate side, but in the middle no space charge exists due to the electron–hole neutralization.