Study on fluorine-doped indium oxide films deposited by reactive evaporating in CF4/O2 gases

Fluorine doped In2O3 films were deposited by DC plasma enhanced evaporating in CF4/O2 mixture gases. The effects of F-doping and annealing on the electrical and optical properties of the films have been investigated. The film resistivity significantly decreased, but the transmittance became low due to F-doping. The film transmittance can be improved by annealing in the vacuum. The annealing at higher temperature is required for higher F-doped amorphous In2O3 films to be crystallized.