P-type InP grown by liquid phase epitaxy from melts with rare earth admixtures

InP single crystal layers were grown by liquid phase epitaxy (LPE) on semi-insulating InP with various rare earth elements added to the melt. The layers were characterized by temperature dependent Hall measurements and low temperature photo-luminescence spectroscopy. The work is focused on studying p-type InP grown with Tb and Yb admixtures. The dominant acceptor in the case of Tb was identified as Mn on the In site. In the case of Yb the dominant acceptor was identified as isoelectronic Yb on the In site subjected to a strong electron-lattice interaction.