Title of article
P-type InP grown by liquid phase epitaxy from melts with rare earth admixtures
Author/Authors
Zdansky، نويسنده , , K. and Prochazkova، نويسنده , , O. and Zavadil، نويسنده , , William J. and Novotny، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
38
To page
42
Abstract
InP single crystal layers were grown by liquid phase epitaxy (LPE) on semi-insulating InP with various rare earth elements added to the melt. The layers were characterized by temperature dependent Hall measurements and low temperature photo-luminescence spectroscopy. The work is focused on studying p-type InP grown with Tb and Yb admixtures. The dominant acceptor in the case of Tb was identified as Mn on the In site. In the case of Yb the dominant acceptor was identified as isoelectronic Yb on the In site subjected to a strong electron-lattice interaction.
Keywords
Luminescence , Hall effect , Rare earth , InP
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138077
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