Delamination of Si by high dose H-ion implantation through thin SiO2 film (ESR characterization)

Delamination of the silicon substrate has been studied by electron spin resonance (ESR) and thermal desorption spectroscopy (TDS) methods. The silicon surface layer was implanted with high dose H+ ions through a thin SiO2 layer. The ESR signals observed from the as-implanted silicon surface layer were composed of two kinds of paramagnetic defects, that is, E′-center (g=2.0009, ΔHpp=3.0 Oe) and hydrogen associated Si dangling bond (PH-center, g=2.0066, ΔHpp=7.0 Oe). The signal intensities of the E′-center and PH-center disappeared after annealing at 400 °C. After the disappearance of these ESR centers, a new ESR center with an oxygen associated Si dangling bond (g=2.0045) was observed, and remained stable even after 1000 °C annealing. The desorption of hydrogen from the Si substrate was observed after annealing at 500 °C, at which temperature the PH-center disappeared.