Annealing effect and impurity doping effects on the defect generation in interstitial-rich Si crystals observed by infrared microscope

We have studied the extended defects in quenched Si crystals. Prismatic punched out dislocations (POD) have been found in the crystals. These dislocations disappeared depending on the holding time just after the growth. This phenomenon is closely related to the diffusion of point defects during the holding at high temperature. The defects have been observed by the infrared microscope after copper decoration. It should be noted that the prismatic dislocations density markedly decreased in boron doped crystals. The crystal becomes remarkably uniform. This means that the mechanical strength at high temperature greatly increases or the behavior of interstitial and/or oxygen atoms widely varied by doping with boron. The defect formation due to interstitials and the effect of boron will be discussed.