X-ray topographic observation of dislocation generation at the seed/crystal interface of Czochralski-grown Si highly doped with B impurity

Dislocation generation in the initial stage of Czochralski-grown Si crystals doped with B in various concentrations was observed by means of X-ray topography. Slip dislocations were generated due to the thermal stress at the dipping stage in the seed and in a crystal doped with B in the concentration lower than 1×1018 cm−3. Misfit dislocations were generated and penetrated into the crystal when the difference of B concentration between the seed and crystal was higher than ≈8×1018 cm−3.