The optoelectronic characterization of the silicon/silicon nitride interface

The silicon/silicon nitride interface was studied by contactless photoconductivity measurements in the microwave frequency range. Good passivation and antireflection properties of Si3N4 coatings were observed. It is shown that spatially resolved measurements offer a very sensitive tool for the characterization of the lateral thickness distribution of the Si3N4 film. The inversion layer at the p c-Si/Si3N4 interface causes a storage of excess charge carriers that can be observed by time resolved photoconductivity measurements.