Title of article
The optoelectronic characterization of the silicon/silicon nitride interface
Author/Authors
Citarella، نويسنده , , G. and Abdallah، نويسنده , , O. and Kunst، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
229
To page
233
Abstract
The silicon/silicon nitride interface was studied by contactless photoconductivity measurements in the microwave frequency range. Good passivation and antireflection properties of Si3N4 coatings were observed. It is shown that spatially resolved measurements offer a very sensitive tool for the characterization of the lateral thickness distribution of the Si3N4 film. The inversion layer at the p c-Si/Si3N4 interface causes a storage of excess charge carriers that can be observed by time resolved photoconductivity measurements.
Keywords
Surface passivation , Silicon/silicon nitride interface , Contactless photoconductance decay , Microwave photoconductivity measurement
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138117
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