Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon

Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented on the same stage in order to get information on surface, as well as on bulk, electronic properties of multi-crystalline Si wafers. The two probes allow for the measurements of three different parameters: the diffusion length, the majority carrier distribution and the work function differences over the whole wafer area in non-contact and non-destructive way, and no wafer preparation is required. Examples of the application of these methods for the characterization of multi-crystalline wafers for photovoltaic applications will be presented.