Frequency-domain EBIC method for mapping of noise and instability regions in semiconductor devices

A frequency-domain electron beam induced current (EBIC) method for visualisation and analysis of noise-enhancement and/or instability regions related to generation–recombination effects in semiconductor devices is presented. The method is illustrated with examples. EBIC map of the InGaAsP/InP avalanche photodiode at the avalanche breakdown is compared with the EBIC map of current noise at the avalanche breakdown. Instability domains in Au/SI GaAs Schottky diode detector structures are visualised for the first time to our best knowledge.