Title of article
Computer simulation of excess carrier distribution for the phase shift microwave detected photoconductivity technique
Author/Authors
Sirotkin، نويسنده , , V.V. and Yakimov، نويسنده , , E.B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
3
From page
253
To page
255
Abstract
A computer simulation of excess carrier distribution in the phase shift mode of the microwave detected photoconductivity method is carried out. For the solution of three-dimensional diffusion equation with corresponding boundary conditions, a finite-difference method using adaptive grids is applied. The most probable concentration determining the phase shift is obtained for a few different minority carrier lifetimes and light beam diameters. It is shown that the most probable excess carrier concentration is determined mainly by the total generation rate and is practically independent of lifetime.
Keywords
Semiconductors , Silicon , electrical measurements , Microwave photoconductivity
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138136
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