Title of article :
Computer simulation of excess carrier distribution for the phase shift microwave detected photoconductivity technique
Author/Authors :
Sirotkin، نويسنده , , V.V. and Yakimov، نويسنده , , E.B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
3
From page :
253
To page :
255
Abstract :
A computer simulation of excess carrier distribution in the phase shift mode of the microwave detected photoconductivity method is carried out. For the solution of three-dimensional diffusion equation with corresponding boundary conditions, a finite-difference method using adaptive grids is applied. The most probable concentration determining the phase shift is obtained for a few different minority carrier lifetimes and light beam diameters. It is shown that the most probable excess carrier concentration is determined mainly by the total generation rate and is practically independent of lifetime.
Keywords :
Semiconductors , Silicon , electrical measurements , Microwave photoconductivity
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2002
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2138136
Link To Document :
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