Determination of diffusion length by the surface electron beam induced voltage method

An application of the surface electron beam induced voltage (SEBIV) method for the contactless measurement of minority carrier diffusion length in semiconductor crystals is discussed. The signal formation in the SEBIV mode is analyzed. The SEBIV signal dependence on excitation parameters is simulated. The experimental dependence of SEBIV signal on the beam energy was compared with simulated ones and a rather good correlation between them is revealed.