Title of article
Determination of diffusion length by the surface electron beam induced voltage method
Author/Authors
Rau، نويسنده , , E.I. and Yakimov، نويسنده , , E.B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
256
To page
259
Abstract
An application of the surface electron beam induced voltage (SEBIV) method for the contactless measurement of minority carrier diffusion length in semiconductor crystals is discussed. The signal formation in the SEBIV mode is analyzed. The SEBIV signal dependence on excitation parameters is simulated. The experimental dependence of SEBIV signal on the beam energy was compared with simulated ones and a rather good correlation between them is revealed.
Keywords
Electron microscopy , Surface electron beam induced voltage , Semiconductors , electrical measurements
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138137
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