Title of article
AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layers
Author/Authors
Eremenko، نويسنده , , V. and Gonzلlez، نويسنده , , L. and Gonzلlez، نويسنده , , Y. and Vdovin، نويسنده , , V. and Vazquez، نويسنده , , L. and Aragَn، نويسنده , , G. and Herrera، نويسنده , , M. and Briones، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
269
To page
273
Abstract
An alternative way to characterise composition modulation in InxGa1−xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along 〈110〉. We propose that morphology features observed in the experiments are related to composition modulation effects.
Keywords
surface morphology , Etching , Transmission electron microscopy , atomic force microscopy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138140
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