Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Cubic silicon carbide (3C-SiC) epilayers with different double position boundaries (DPBs) and stacking faults (SF) density grown on n-6H-SiC Lely substrates by vacuum sublimation epitaxy were characterized by optical microscopy after oxidation in dry O2 at 1100 °C and X-ray topography. Using the methods of electron beam-induced current (EBIC) and secondary electrons (SE), the intermediate 6H-SiC layer at the interface between 3C-SiC epilayer with high DPBs and SF density and 6H-SiC substrate was detected. Triangular shape regions crossing the upper 3C-SiC epilayer represent local p–n junctions and look like the cross-section transmission electron microscopy (TEM) images of structures with SF.