Defect specific topography of GaAs wafers by microwave-detected photo induced current transient spectroscopy

Non-destructive and spatially resolved (35 μm) characterisation methods for high resistivity GaAs and epitaxial substrates are presented. Microwave detected photo induced current transient spectroscopy (PICTS) is a further development of the already existing method Microwave detected photoconductivity (MDP). Using various GaAs samples of different preparations, the possibilities of these new tools are demonstrated along with the first results for technologically relevant extrinsic and intrinsic defects.