On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers

High resolution X-ray diffraction technique was used to evaluate sets of samples which consisted of an molecular beam epitaxy (MBE) grown low temperature (LT) GaAs layer on semi-insulating GaAs substrate. The GaAs layers were Be doped with three different concentrations and subsequently annealed at temperatures ranging from 500 to 800 °C. X-ray results were compared with resistivity measurements showing similarities in their annealing temperatures dependencies. X-ray double crystal topography was also employed to evaluate the overall quality of the samples and macro-defect content. The topographies show no misfit dislocations in all annealed samples.