Author/Authors :
Boh??ek، نويسنده , , J. and Korytar، نويسنده , , D and Ferrari، نويسنده , , C and Dubeck?، نويسنده , , F and Surma، نويسنده , , B and Zatʹko، نويسنده , , B and ?matko، نويسنده , , V and Huran، نويسنده , , J and Fornari، نويسنده , , R and Sek??ov?، نويسنده , , M and Strzelecka، نويسنده , , S، نويسنده ,
Abstract :
Semi-insulating (SI) InP substrates from four producers have been studied by galvanomagnetic methods, X-ray diffraction, laser scattering tomography, and scanning electron beam induced current (EBIC) techniques. The detection performances of radiation detectors fabricated from the materials were tested using 59.5 and 122 keV gamma ray sources. The highest apparent Hall mobility has been observed in a substrate with low Fe content, produced by LEC method and a post-growth wafer annealing process. Detectors based on this material exhibited the best overall detection performance. SI InP material grown by VGF method showed the lowest dislocation and precipitate densities and also acceptable detection performance. Room temperature (RT) operation of SI InP detectors is demonstrated.
Keywords :
Detection performance , radiation detector , InP , semi-insulating , Defects , X-ray diffraction , Laser scattering tomography , EBIC
