Title of article
Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique
Author/Authors
Plaza، نويسنده , , J.L. and Hidalgo، نويسنده , , P. and Méndez Lَpez، نويسنده , , B. and Piqueras، نويسنده , , J. and Diéguez، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
529
To page
533
Abstract
The defect structure of Te-doped GaSb samples co-doped with Er2O3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been analysed by means of cathodoluminescence (CL), scanning electron microscopy (SEM) and wavelength dispersive X-ray microanalysis (WDX). The effect of the defect structure and sample composition on the electrical properties of the material has been established taking into account the results obtained by means of the van der Pauw technique.
Keywords
gallium antimonide , Tellurium , CL , WDX , doping effects
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138339
Link To Document