Title of article
AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)
Author/Authors
S?nchez، نويسنده , , A.M and Pacheco، نويسنده , , F.J. and Molina، نويسنده , , S.I and Ruterana، نويسنده , , P and Calle، نويسنده , , F and Palacios، نويسنده , , T.A and S?nchez-Garc??a، نويسنده , , M.A and Calleja، نويسنده , , E and Garc??a، نويسنده , , R، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
181
To page
184
Abstract
The AlN buffer layer thickness influence on the inversion domains (IDs) in GaN/AlN/Si(111) grown by plasma assisted molecular beam epitaxy (MBE) is studied by transmission electron microscopy (TEM). The GaN layer polarity is determined by convergent beam electron diffraction (CBED). The AlN buffer layer thickness notably affects to the IDs density and the GaN epilayer polarity. Moreover the threading dislocation distribution existence also depends on such thickness.
Keywords
Molecular beam epitaxy (MBE) , Transmission electron microscopy (TEM) , GaN , Inversion domains (IDs) , AlN buffer , Si (111) , Surface polarity
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138519
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