Author/Authors :
Vennéguès، نويسنده , , P and Benaissa، نويسنده , , M and Dalmasso، نويسنده , , S and Leroux، نويسنده , , G and Feltin، نويسنده , , E and De Mierry، نويسنده , , P and Beaumont، نويسنده , , B and Damilano، نويسنده , , B and Grandjean، نويسنده , , N and Gibart، نويسنده , , P، نويسنده ,
Abstract :
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the presence of pyramidal inversion domains (PIDs). It is shown that the appearance of PIDs is correlated with a decrease of the free hole concentration and with the appearance of the blue photoluminescence band which is characteristic of MOVPE-grown Mg-doped GaN. A tentative model based on electrostatic considerations is proposed for this blue luminescence band.
