Author/Authors :
Pearton، نويسنده , , S.J. and Theodoropoulou، نويسنده , , N. and Overberg، نويسنده , , M.E. and Abernathy، نويسنده , , C.R. and Hebard، نويسنده , , A.F. and Chu، نويسنده , , S.N.G. and Wilson، نويسنده , , R.G. and Zavada، نويسنده , , J.M.، نويسنده ,
Abstract :
High concentrations (>1021 cm−3) of Ni were introduced into GaN and SiC by ion implantation at 350 °C. On subsequent annealing at 700 °C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either GaN or SiC. The direct implantation process appears useful for studying ion/substrate combinations for potential spintronic applications.
