Room-temperature emission from InAs1−xPx/InP self-assembled quantum dots at wavelengths between 1.2 and 1.35 μm

We report on photoluminescence (PL) from self-assembled InAs1−xPx quantum dots (QDs) grown on (100) InP substrate by the low pressure metalorganic vapour phase epitaxy with As/P exchange reaction. PL measurements at temperatures between 4 and 300 K revealed a high-efficiency radiative recombination in the QDs. The high temperature stability of intensity and wavelength of emitted radiation in the spectral range between 1.2 and 1.35 μm demonstrate the potential of the InAs1−xPx/InP QDs for optoelectronic applications.