Title of article :
Structure of silicon processed by severe plastic deformation
Author/Authors :
Islamgaliev، نويسنده , , R.K. and Kuzel، نويسنده , , R and Mikov، نويسنده , , S.N and Igo، نويسنده , , A.V and Burianek، نويسنده , , J and Chmelik، نويسنده , , F and Valiev، نويسنده , , R.Z، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
The structural features of nanocrystalline (NC) Si processed by severe plastic deformation are considered. The results of studies by various techniques (transmission electron microscopy, X-ray diffraction, Raman scattering and photoluminescence) are presented. The investigations show that the structure of NC materials is characterized by both a small grain size and a specific defect structure of grain boundaries associated with a high level of elastic strains and significant microdistortions of the crystal lattice. The Raman spectrum reveals a peak shift of 2.5 cm−1 to lower frequencies, a peak broadening up to 14.2 cm−1, an asymmetry of the peaks and an additional peak at frequencies from 480 to 500 cm−1. A visible photoluminescence with a peak maximum at a wavelength of about 650 nm is observed.
Keywords :
Nanocrystalline silicon , Severe plastic deformation
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Journal title :
MATERIALS SCIENCE & ENGINEERING: A