Title of article :
Study of Ru etching using O2/Cl2 helicon plasmas
Author/Authors :
Kim، نويسنده , , Hyoun Woo and Han، نويسنده , , Jae-Hyun and Ju، نويسنده , , Byong-Sun and Kang، نويسنده , , Chang-Jin and Moon، نويسنده , , Joo-Tae and Tokumoto، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
We have investigated the characteristics of ruthenium (Ru) etching using O2/Cl2 helicon plasmas, resulting in the high Ru etch profile (>85°) and the optimal etch rate (>500 Å min−1). We revealed that the chamber pressure greatly affects the Ru etch rate and Ru to mask etch selectivity. The dependence of Re etch rate on pressure was scrutinized for both patterned and non-patterned wafers.
Keywords :
Ru , Helicon , Etching , Pressure
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
