New simple synthesis route of GaN powders from gallium oxyhydroxide

In this investigation, we report a new simple method to synthesize the gallium nitride (GaN) powders from gallium oxyhydroxide (GaOOH). Simple heat treatment of GaOOH in the flow of NH3 gas leads to the formation of submicron hexagonal GaN powders even at the low reaction temperature of 800 °C through intermediate conversion of α-Ga2O3. Low temperature photoluminescence measurements show the impurity-doped characteristics of GaN powders. The results obtained demonstrate that the large-quantity submicron GaN powders can be synthesized from GaOOH powders.