Application of novel photochemical deposition technique for the deposition of indium sulfide

Indium sulfide thin films were grown by photochemical deposition technique from an aqueous solution by means of UV illumination. Both the as-grown and annealed films were studied by different analysis tools. The X-ray diffraction analysis confirmed the initial amorphous nature of as-deposited InS film and phase transition into crystalline In2S3 form upon annealing at 500 °C. The structural phase transition upon annealing has also been revealed by the Raman spectroscopic analysis. The compositional analysis by Auger electron spectroscopy indicated that the InS film contains oxygen as the impurity element. The bandgap energy of the as-deposited and annealed films was analyzed by means of optical transmission study.