Title of article
ITO spin-coated porous silicon structures
Author/Authors
Daoudi، نويسنده , , K and Sandu، نويسنده , , C.S and Moadhen، نويسنده , , A and Ghica، نويسنده , , C and Canut، نويسنده , , B and Teodorescu، نويسنده , , V.S and Blanchin، نويسنده , , M.G and Roger، نويسنده , , J.A and Oueslati، نويسنده , , M and Bessa??s، نويسنده , , B، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
262
To page
265
Abstract
Porous silicon (PS)-based structures were formed by deposition of an indium tin oxide (ITO) onto PS surface using the sol–gel spin coating route. Two types of thermal annealing processes, classical and rapid thermal annealing, were used in order to crystallise the ITO films. The initial photoluminescence of the PS layers is partly preserved. The morphology of ITO/PS structure was investigated by cross-sectional transmission electron microscopy (XTEM) and by Rutherford backscattering spectrometry (RBS) measurements.
Keywords
Ito , Sol–gel , TEM , RBS , Porous silicon
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2139298
Link To Document