Author/Authors :
Daoudi، نويسنده , , K and Sandu، نويسنده , , C.S and Moadhen، نويسنده , , A and Ghica، نويسنده , , C and Canut، نويسنده , , B and Teodorescu، نويسنده , , V.S and Blanchin، نويسنده , , M.G and Roger، نويسنده , , J.A and Oueslati، نويسنده , , M and Bessa??s، نويسنده , , B، نويسنده ,
Abstract :
Porous silicon (PS)-based structures were formed by deposition of an indium tin oxide (ITO) onto PS surface using the sol–gel spin coating route. Two types of thermal annealing processes, classical and rapid thermal annealing, were used in order to crystallise the ITO films. The initial photoluminescence of the PS layers is partly preserved. The morphology of ITO/PS structure was investigated by cross-sectional transmission electron microscopy (XTEM) and by Rutherford backscattering spectrometry (RBS) measurements.
Keywords :
Ito , Sol–gel , TEM , RBS , Porous silicon
