Title of article :
Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2
Author/Authors :
Ioannou-Sougleridis، نويسنده , , V. I. Kamenev، نويسنده , , B. and Kouvatsos، نويسنده , , D.N. and Nassiopoulou، نويسنده , , A.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
324
To page :
328
Abstract :
The influence of the application of a high electric field on the radiative recombination of an electron–hole pair in a silicon nanocrystal in SiO2 has been investigated experimentally by examining the photoluminescence emission under the influence of the field. It was found that the PL signal was first slightly red-shifted at relatively low-fields and it was then blue-shifted at higher fields. PL degradation was also observed which was partially restored after removal of the electric field. This behavior has been attributed to the quantum-confined Stark effect, combined with Auger quenching and charge escape from the nanocrystals.
Keywords :
silicon nanocrystals , Photoluminescence , Quantum-confined Stark effect
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2003
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2139341
Link To Document :
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