• Title of article

    Imaging and modeling of nanocrystalline Xe in Al containing defects

  • Author/Authors

    Furuya، نويسنده , , Kazuo and Mitsuishi، نويسنده , , Kazutaka and Ishikawa، نويسنده , , Nobuhiro and Allen، نويسنده , , Charles W.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    85
  • To page
    90
  • Abstract
    Morphological and crystallographic structures of a Xe nanocrystal embedded in Al were determined with off-Bragg high-resolution transmission electron microscopy (OB-HRTEM). The nanocrystals have a size in a range from 1 to 10 nm and precipitate with a FCC structure, mesotactically aligned with Al matrix. OB-HRTEM revealed Xe cuboctahedron crystals with faces parallel to eight Al {111} planes truncated by six {100} planes. Atomic resolution microscopy indicates that the nanocrystals often contain lattice defects, which consist of a stacking fault. Simulated images for a nanocrystal containing a stacking fault agreed well with experimental images. The process of a defect introduction into a nanocrystal was successfully recorded on videotape. A frame by frame analysis shows the introduction of a Shockely partial dislocation to form the fault. This introduction requires the motion of atoms in several layers in one side of the fault, to relax the strain caused by the change in stacking sequence.
  • Keywords
    Xe nanocrystal , OB-HRTEM , Cuboctahedron , Stacking fault , Partial dislocation
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    2000
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2139389