‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation

Cross-sectional transmission electron microscopy (TEM) analysis has become routinely used in semiconductor industry to support failure and yield analysis. Plan-view transmission electron microscopy analysis however is much less frequently performed. In this paper it is illustrated that plan-view transmission electron microscopy analysis can add valuable information in yield analysis studies, especially when crystal defects are involved. ‘3-Dimensional’ information can be obtained by combining cross-sectional transmission electron microscopy analysis with plan-view analysis. If the available material is limited, it can become a difficult choice whether to go for a cross-sectional or a plan-view analysis. Therefore it was explored if a cross-sectional specimen could still be made out of a plan-view specimen, using the plan-view analysis to locate the failure site precisely. This has recently been successfully done using the in-situ lift-out technique in the focused ion beam machine.