Title of article :
Variation of light emitting properties of ZnO thin films depending on post-annealing temperature
Author/Authors :
Kang، نويسنده , , Hong Seong and Kang، نويسنده , , Jeong Seok and Pang، نويسنده , , Seong Sik and Shim، نويسنده , , Eun-Sub and Lee، نويسنده , , Sang Yeol، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
313
To page :
316
Abstract :
ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition (PLD). In order to investigate the effect of post-annealing treatment on the optical property of ZnO thin films, films have been annealed in oxygen at various annealing temperatures after deposition. After post-annealing treatment in the oxygen ambient, the optical properties of ZnO thin films were characterized by photoluminescence (PL). The structural properties of ZnO thin films were characterized by XRD. Crystallinity of ZnO film is enhanced at annealing temperature above 700 °C. As the post-annealing temperature increases, intensity of UV (380 nm) peak is decreased while the intensity of visible (about 490–530 nm) peak is increased, carrier concentration is decreased and resistivity was increased. Structural, electrical and optical properties of ZnO films have been investigated for the application of light emission device.
Keywords :
Photoluminescence , ZNO , pulsed laser deposition , Post-annealing treatment
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2003
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2139546
Link To Document :
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