Annealing effect on the structural and optical properties of ZnO thin film on InP

II–VI semiconducting ZnO thin films have been fabricated by pulsed laser deposition (PLD) process on indium phosphide (InP) (100) substrates. Thin films were annealed at various temperatures in order to study the annealing temperature dependence of the structural and optical properties of ZnO thin film grown on InP substrate. The structural and optical properties were characterized with X-ray diffraction (XRD) and photoluminescence (PL), respectively. In our study, we have found some defect levels from the PL spectra and derived the defect centerʹs activation energy. According to XRD data, it could be thought that the films had some strains but relaxed by annealing processes.