Title of article
Some physical properties of chalcopyrite and orthorhombic AgInS2 thin films prepared by spray pyrolysis
Author/Authors
Aguilera، نويسنده , , M.L.Albor and Ortega-Lَpez، نويسنده , , M. and Resendiz، نويسنده , , V.M.Sلnchez and Hernلndez، نويسنده , , J.Aguilar and Trujillo، نويسنده , , M.A.Gonzلlez، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
380
To page
384
Abstract
AgInS2 thin films were prepared by spray pyrolysis of an alcoholic solution of silver acetate, indium chloride and thiourea. The samples were grown at substrate temperatures of 375 and 400 °C from a spray solution in which the silver to indium molar ratio ([Ag]/[In]) was varied in the range 0.5–1.625. The AgInS2 chalcopyrite phase and its orthorhombic modification were found to be predominant ones in the films grown from solutions with [Ag]/[In]=0.87–1.6 and 0.87, respectively. The Ag2S, In2S3 and AgIn5S8 secondary phases were found to present in sprayed films. Estimated optical gap energies were 1.88 and 2.03 eV for chalcopyrite AgInS2 and 1.98 eV for orthorhombic AgInS2. All deposited films exhibited n-type conduction and a room temperature resistivity in the range 103–106 Ω m.
Keywords
Chalcopyrite , Orthorhombic , Silver indium sulfide , Structural and optical properties
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2139597
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