Properties of oriented and graded PZT thin films

Highly [111]- and [100]-oriented compositionally graded PZT thin films have been grown at 500 °C on platinized silicon substrates by in situ RF sputtering. Electrical measurements will be presented in links with the layers structural properties. We show that the graded nature of the film alone does not seem to be sufficient to observe a polarization offset. We suggest that asymmetrical leakage currents may be at the origin of this offset.