Title of article :
Secondary ion mass spectroscopy study of failure mechanism in organic light emitting devices
Author/Authors :
Ke، نويسنده , , Lin and Zhang، نويسنده , , Keran and Yakovlev، نويسنده , , Nikolai and Chua، نويسنده , , Soo Jin and Chen، نويسنده , , Peng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
1
To page :
4
Abstract :
Secondary ion mass spectroscopy is used to examine the dark, non-emissive defects on the organic light emitting device. Boundary movements are originated from electrode imperfection. Due to flexibility and movability of polymer layer, distribution variations and a more severe indium and calcium overlapping are detected in dark spot defect area. Boundary movements are not in good agreement between different layers. Interfaces became undulate. The closeness and proximity between the In sharp spikes and cathode metal protrusion leads to the initial point of dark spot. We demonstrate that the presence of cathode imperfection and interface roughness of different layers correlated to the device dark spot formation.
Keywords :
Secondary ion mass spectrometry , Organic light emitting diode , Failure mechanism
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2003
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2140041
Link To Document :
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