Effect of growth temperature on ZnO thin film deposited on SiO2 substrate

We investigated the effect of deposition temperature on the growth and structural quality of ZnO films on SiO2 substrate in the range of 100–250 °C using the metal organic chemical vapor deposition (MOCVD) technique. We revealed that highly c-axis oriented ZnO thin films were obtained at the temperature of 200–250 °C and the ZnO thin film was successfully deposited at the lower temperature of 100–150 °C. The c-axis orientation of the film improved and the grain size increased by increasing growth temperature.