Effect of oxide growth temperature on the electrical performance of extremely thin (∼3 nm) wet oxides of silicon

In the present investigation, extremely thin (∼3 nm) oxides of silicon are grown by using wet oxidation technique in the temperature range 600–900 °C. The capacitance–voltage, current–voltage and charge trapping characteristics are used to study the electrical properties of these thin oxides. The results show that the electrical performance of the extremely thin oxide improves with the increase in the oxide growth temperature.