Effect of substrate bias on β-SiC films prepared by PECVD

With negative bias, cubic silicon carbide (β-SiC) films were grown on silicon wafers by plasma-enhanced chemical vapor deposition at lower substrate temperature of 500 °C. Fourier transform infrared spectra of the films have shown the characteristic absorption of β-SiC and higher order degree with moderate bias. Furthermore, X-ray diffraction data indicated that the films of polycrystalline with the bias are preferentially oriented. The mechanism about the enhancing effect of the bias is discussed on the performance of positive ions in the plasma.