Title of article
Low temperature PECVD SiNx films applied in OLED packaging
Author/Authors
Huang، نويسنده , , Weidong and Wang، نويسنده , , Xuhong and Sheng، نويسنده , , Mei and Xu، نويسنده , , Liqiang and Stubhan، نويسنده , , Frank and Luo، نويسنده , , Le and Feng، نويسنده , , Tao and Wang، نويسنده , , Xi and Zhang، نويسنده , , Fumin and Zou، نويسنده , , Shichang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
7
From page
248
To page
254
Abstract
Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx films deposited at the substrate temperatures from 20 to 180 °C and at the RF powers from 10 to 30 W were investigated. It is found that the filmsʹ properties such as density, refractive index, composition and bonding configuration are varied with the substrate temperature and RF power. The moisture resistant ability of the deposited SiNx films was investigated by the water vapor permeation (WVP) measurement. Even at the low substrate temperature such as 50 °C, the moisture resistance of SiNx films keeps quite good. Our results can be applied in Organic Light Emitting Devices (OLED) packaging effectively.
Keywords
Thin film , OLED , Packaging , PECVD
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2140285
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