The kinetics of initial stage in sintering process of BaTiO3-based PTCR ceramics and its computer simulation

In the present paper, the research on the sintering mechanism of BaTiO3-based Positive Temperature Coefficient of Resistance (PTCR) semiconductive ceramics was carried out. According to the mechanisms of surface diffuse and volume diffuse, the comprehension acting mechanism was suggested, the kinetic equation was proposed at the initial stage of sintering, and the initial stage of sintering process was simulated by a computer. We obtained the object illustrations about the relationships between the grain growth of the initial stage of sintering on BaTiO3-based PTCR ceramics and sintering temperatures, as well as the particle sizes of raw materials.