Electric and photoelectric properties of semi-insulating crystals of CdTe:Pb

CdTe:Pb monocrystals were grown by the Bridgemann method. The impurity concentration in the melt was in the ranges of NPb0=1018–5×1019 cm−3. From the electric measurements it turns out that the lead creates deep levels with EV +0.43 eV in CdTe. At the mentioned concentrations, NPb0 the hole concentration is (6.11×109–1.98×1013) cm−3. From the photoelectric measurements it follows that recombination processes in CdTe:Pb could be explained by the presence of the defects with significantly different trapping cross-sections of electrons and holes (Spr≫Snr). The trapping asymmetry of the mentioned centers was defined to be Spr/Snr>106.