Author/Authors :
Kuo، نويسنده , , C.H. and Chang، نويسنده , , S.J and Su، نويسنده , , Y.K. and Chuang، نويسنده , , R.W and Chang، نويسنده , , C.S. and Wu، نويسنده , , L.W. and Lai، نويسنده , , W.C. and Chen، نويسنده , , J.F. and Sheu، نويسنده , , J.K. and Lo، نويسنده , , H.M. and Tsai، نويسنده , , J.M.، نويسنده ,
Abstract :
Indium tin oxide (ITO) (2300 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400 nm) and a reasonably small 1.2×10−3 Ω cm2 specific contact resistance. It was also found that, at 20 mA, the forward voltage of the near-UV LED with ITO on n+-SPS upper contact was 3.13 V, which is exactly the same as that of the near-UV LED with Ni/Au on n+-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n+-SPS upper contact.
