Author/Authors :
Wang، نويسنده , , X.H. and Fan، نويسنده , , X.W and Shan، نويسنده , , C.X. and Zhang، نويسنده , , Z.Z and Su، نويسنده , , W and Zhang، نويسنده , , J.Y and Su، نويسنده , , Y.K. and Chang، نويسنده , , S.J and Lu، نويسنده , , Y.M. and Liu، نويسنده , , Catherine Y.C and Shen، نويسنده , , D.Z، نويسنده ,
Abstract :
We report the growth and characterization of ZnSe films prepared on ZnO–Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1 h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO–Si(1 1 1) sample with a 53 meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).
Keywords :
ZnSe films , Si substrate , LP-MOCVD , Buffer layer
