Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD

In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(1 0 0) substrate at low temperatures. Nitrogen (N2) and hydrogen (H2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details.