Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate

In this paper, the preparation of discontinuous microcrystalline diamond with special structure, deposited on a porous silicon (PS) substrate by microwave chemical vapor deposition (MW-CVD) technology was reported, and the field electron emission of the diamonds were studied. Our experimental results indicated that the diamonds have a lower field emission threshold voltage (<0.8 V/μm) and a higher field emission current density (>17.5A/cm2). A preliminary explanation of this special field electron emission was given in our paper.